Press releases worldwide
Dr. Andreas Erdmann, head of the Computational Lithography and Optics group at Fraunhofer IISB for decades and SPIE (International Society for Optics and Photonics) Fellow since 2016, has been honored with the 2026 SPIE Frits Zernike Award for Microlithography. The […]
Silicon carbide (SiC) is a promising material platform for photonic integrated circuits (PICs) and miniaturized solid-state quantum systems. In the ALP-4-SiC project – Atomic Layer Processing for SiC for Applications in Photonics and Quantum Communication – researchers from the Max […]
It’s a milestone for lithium-free battery technology: for the first time ever, a complete battery system demonstrator based on aluminum-graphite-dual-ion batteries (AGDIB) has been realized. This proves the stability of the new battery cell chemistry not only in a laboratory […]
Silicon carbide (SiC) provides considerable technical advantages for power electronics – however, the costs are still a drawback. In the »ThinSiCPower« research project, a consortium of Fraunhofer Institutes is developing key technologies to reduce material losses and device thickness while […]
Electromobility, energy supply, automation, and broadband communication – especially in the light of digital transformation and climate change – are opening up new opportunities for European research to take lead in international competition. Semiconductor technology in particular currently offers major […]
Wide-bandgap (WBG) semiconductor technology and artificial intelligence together are revolutionizing power electronics. A new class of intelligent power electronic systems is unlocking new performance and application areas. The high demands of system development impact the entire power electronics value chain. […]
A cross-organizational team from Rigaku SE and Fraunhofer IISB has established a new semiconductor material characterization method in their jointly operated Center of Expertise for X-ray Topography in Erlangen, Germany. They succeeded not only in developing an industry-ready X-ray topography […]
When it comes to particularly low-loss semiconductor components and highly efficient power electronics, there is no way around silicon carbide (SiC) today. The wide-bandgap semiconductor material SiC is superior to conventional silicon in many respects and is conquering more and […]
A unique XRT tool was installed recently at Fraunhofer IISB to revolutionize state of the art semiconductor material defect characterization techniques. Rigaku Corporation and Fraunhofer IISB have built the Center of Expertise for X-ray Topography in Erlangen to support the […]